(China (Mainland))
Product Summary
The W29EE512P-70 is a 512K bit, 5-volt only CMOS flash memory organized as 64K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE512 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.
Parametrics
W29EE512P-70 absolute maximum ratings: (1)Power Supply Voltage to Vss Potential: -0.5 to +7.0 V; (2)Operating Temperature: 0 to +70 ℃; (3)Storage Temperature: -65 to +150 ℃; (4)D.C. Voltage on Any Pin to Ground Potential except A9: -0.5 to VCC +1.0 V; (5)Transient Voltage (¡ Õ20 nS)on Any Pin to Ground Potential: -1.0 to VCC +1.0 V; (6)Voltage on A9 and OE Pin to Ground Potential: -0.5 to 12.5 V.
Features
W29EE512P-70 features: (1)Single 5-volt program and erase operations; (2)Fast page-write operations; (3)Fast chip-erase operation: 50 mS; (4)Read access time: 70/90/120 nS; (5)Typical page program/erase cycles: 1K/10K; (6)Ten-year data retention; (7)Software and hardware data protection; (8)Automatic program timing with internal VPP generation; (9)End of program detection; (10)Latched address and data; (11)TTL compatible I/O; (12)JEDEC standard byte-wide pinouts; (13)Available packages: 32-pin PLCC, TSOP and VSOP.
Diagrams
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W29EE512 |
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Negotiable |
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