Product Summary

The NDT3055L is a logic level N-Channel enhancement mode power field effect transistor. The NDT3055L is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. The NDT3055L is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Parametrics

NDT3055L absolute maximum ratings: (1)VDSS Drain-Source Voltage: 60 V; (2)VGSS Gate-Source Voltage - Continuous: ±20 V; (3)ID Maximum Drain Current - Continuous: 4 A, Pulsed 25A; (4)PD Maximum Power Dissipation: 3 W; (5)TJ,TSTG Operating and Storage Temperature Range: -65 to 150 ℃.

Features

NDT3055L features: (1)4 A, 60 V. RDS(ON)= 0.100 W @ VGS = 10 V, RDS(ON)= 0.120 W @ VGS = 4.5 V; (2)Low drive requirements allowing operation directly from logic drivers. VGS(TH)< 2V; (3)High density cell design for extremely low RDS(ON); (4)High power and current handling capability in a widely used surface mount package.

Diagrams

NDT3055L pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
NDT3055L
NDT3055L
Fairchild Semiconductor
MOSFET SOT-223 N-CH LOGIC
Data Sheet
0-1: $0.34
1-25: $0.30
25-100: $0.26
100-250: $0.23
NDT3055L_Q
NDT3055L_Q
Fairchild Semiconductor
MOSFET SOT-223 N-CH LOGIC
Data Sheet
Negotiable