Product Summary

The FMG2G100US60 is a Fairchilds Insulated Gate Bipolar Transistor (IGBT) power module. The FMG2G100US60 provides low conduction and switching losses as well as short circuit ruggedness. The FMG2G100US60 is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

Parametrics

FMG2G100US60 absolute maximum ratings: (1)VCES Collector-Emitter Voltage: 600 V; (2)VGES Gate-Emitter Voltage: ± 20 V; (3)IC Collector Current @ TC = 25℃: 100 A; (4)ICM (1)Pulsed Collector Current: 200 A; (5)IF Diode Continuous Forward Current @ TC = 100℃: 100 A; (6)IFM Diode Maximum Forward Current: 200 A; (7)TSC Short Circuit Withstand Time @ TC = 100℃: 10 us; (8)PD Maximum Power Dissipation @ TC = 25℃: 400 W; (9)TJ Operating Junction Temperature: -40 to +150 ℃; (10)Tstg Storage Temperature Range: -40 to +125 ℃.

Features

FMG2G100US60 features: (1)UL Certified No. E209204; (2)Short Circuit rated 10us @ TC = 100℃, VGE = 15V; (3)High Speed Switching; (4)Low Saturation Voltage : VCE(sat)= 2.2 V @ IC = 100A; (5)High Input Impedance; (6)Fast & Soft Anti-Parallel FWD.

Diagrams

FMG2G100US60 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FMG2G100US60
FMG2G100US60
Fairchild Semiconductor
IGBT Modules 600V/100A/2
Data Sheet
Negotiable 
FMG2G100US60_Q
FMG2G100US60_Q
Fairchild Semiconductor
IGBT Transistors 600V/100A/2
Data Sheet
Negotiable